THIN FILM STRUCTURE AND PRODUCTION METHOD FOR SAME

摘要

The present invention concerns a thin film structure wherein the gallium nitride bonding density can be markedly reduced and a production method for same. Provided is a thin film structure comprising a sapphire-containing supporting substrate, and comprising an epitaxial layer which is disposed on the supporting substrate and contains gallium nitride; and the upper part of the supporting substrate facing the epitaxial layer is made of a layer wherein silicon is either diffused or ion implanted through the upper surface of the supporting substrate.