发明名称 |
MULTI-THRESHOLD CIRCUITRY BASED ON SILICON-ON-INSULATOR TECHNOLOGY |
摘要 |
<p>Multiple threshold voltage circuitry based on silicon-on-insulator (SOI) technology is disclosed which utilizes N-wells and/or P-wells underneath the insulator in SOI FETs. The well under a FET is biased to influence the threshold voltage of the FET. A PFET and an NFET share a common buried P-well or N-well. Various types of logic can be fabricated in silicon-on-insulator (SOI) technology using multiple threshold voltage FETs. Embodiments provide circuits including the advantageous properties of both low-leakage transistors and high-speed transistors.</p> |
申请公布号 |
WO2015042049(A1) |
申请公布日期 |
2015.03.26 |
申请号 |
WO2014US55879 |
申请日期 |
2014.09.16 |
申请人 |
WAVE SEMICONDUCTOR, INC. |
发明人 |
SINGH, GAJENDRA, PRASAD;CARPENTER, ROGER |
分类号 |
H01L27/12;H01L21/84;H01L29/78 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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