FILM-FORMING METHOD FOR FORMING SILICON OXIDE FILM ON TUNGSTEN FILM OR TUNGSTEN OXIDE FILM

摘要

A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer, wherein the seed layer formed on the tungsten film or the tungsten oxide film is formed by heating the object to be processed and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film.

主权项

1. A film-forming method of forming a silicon oxide film, the film-forming method comprising:
forming a tungsten film or a tungsten oxide film on an object to be processed, the tungsten film or the tungsten oxide film having a first exposed surface and the object having a second exposed surface, the first exposed surface and the second exposed surface being in contact with each other at an interface between the object and the tungsten film or the tungsten oxide film; heating the first exposed surface of the tungsten film or the tungsten oxide film and the second exposed surface of the object; forming a first seed layer on the first exposed surface and a second seed layer on the second exposed surface by supplying an aminosilane-based gas simultaneously both on the heated first exposed surface and on the heated second exposed surface; and forming a silicon layer on both the first seed layer and the second seed layer by supplying a silicon material gas including silicon on the first seed layer and the second seed layer and then forming a silicon oxide film on both the first seed layer and the second seed layer by supplying a gas including an oxidizing agent on the silicon layer.