发明名称 |
HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
Disclosed is a manufacturing method of a high electron mobility transistor. The method includes: forming a source electrode and a drain electrode on a substrate; forming a first insulating film having a first opening on an entire surface of the substrate, the first opening exposing a part of the substrate; forming a second insulating film having a second opening within the first opening, the second opening exposing a part of the substrate; forming a third insulating film having a third opening within the second opening, the third opening exposing a part of the substrate; etching a part of the first insulating film, the second insulating film and the third insulating film so as to expose the source electrode and the drain electrode; and forming a T-gate electrode on a support structure including the first insulating film, the second insulating film and the third insulating film. |
申请公布号 |
US2015087142(A1) |
申请公布日期 |
2015.03.26 |
申请号 |
US201414555182 |
申请日期 |
2014.11.26 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
LIM Jong-Won;AHN Ho Kyun;PARK Young Rak;KANG Dong Min;CHANG Woo Jin;KIM Seong-il;BAE Sung Bum;LEE Sang-Heung;YOON Hyung Sup;JU Chull Won;MUN Jae Kyoung;NAM Eun Soo |
分类号 |
H01L29/66;H01L21/311;H01L21/28;H01L29/423 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of manufacturing a high electron mobility transistor, the method comprising:
forming a source electrode and a drain electrode on a substrate; forming a first insulating film having a first opening on an entire surface of the substrate, the first opening exposing a part of the substrate; forming a second insulating film having a second opening within the first opening, the second opening exposing a part of the substrate; forming a third insulating film having a third opening within the second opening, the third opening exposing a part of the substrate; etching a part of the first insulating film, the second insulating film and the third insulating film so as to expose the source electrode and the drain electrode; and forming a T-gate electrode on a support structure comprising the first insulating film, the second insulating film and the third insulating film. |
地址 |
Daejeon KR |