| 摘要 |
<p>Provided is a film-forming device which is capable of using a radiation thermometer to measure with a low error rate the surface temperature of a material to be worked when forming a film having an emissivity that is different from the emissivity of the material to be worked. The present invention comprises: a microwave supply unit that supplies, via a microwave supply port, microwaves for producing plasma along the processing surface of the material to be worked which is disposed inside a processing container; a negative voltage application unit which applies a negative bias voltage, that causes a sheath layer to expand along the processing surface of the material to be worked, to the material to be worked via a negative voltage electrode; a radiation thermometer which is disposed outside a window unit provided to the processing container, and measures the temperature of the processing surface of the material to be worked; and a temperature calculation unit which calculates the surface temperature of the processing surface of the material to be worked during film-forming processing. The surface temperature is calculated on the basis of a correction emissivity, the output temperature of the radiation thermometer, and a thermometer-set emissivity that has been set by the radiation thermometer. The correction emissivity is set in accordance with the progress of the film-forming processing on the basis of a first emissivity of the material to be worked and a second emissivity of a coating film formed on the processing surface of the material to be worked.</p> |
