OXIDE SEMICONDUCTOR TRANSISTOR WITHOUT THRESHOLD VOLTAGE CHANGE IN NBIS METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed are an oxide semiconductor transistor without the change of a threshold voltage in NBIS and a manufacturing method thereof. The disclosed oxide semiconductor transistor includes a substrate, a first gate electrode which is located on the substrate, a source electrode and a drain electrode which are located on the first gate electrode, and a second gate electrode which is located on the source electrode and the drain electrode. The width of a vertical distance between the source electrode and one end of the second gate electrode or the width of a vertical distance between the drain electrode and the other end of the second gate electrode is 0.5um to 5um.