| 发明名称 |
Masking Process and Structures Formed Thereby |
| 摘要 |
A method, e.g., of forming and using a mask, includes forming an inverse mask over a dielectric layer; forming a mask layer conformally over the inverse mask; removing horizontal portions of the mask layer; and after removing the horizontal portions, simultaneously etching the inverse mask and vertical portions of the mask layer. The etching the inverse mask is at a greater rate than the etching the vertical portions of the mask layer. The etching the inverse mask removes the inverse mask, and the etching the vertical portions of the mask layer forms a mask comprising rounded surfaces distal from the dielectric layer. Recesses are formed in the dielectric layer using the mask. Locations of the inverse mask correspond to fewer than all locations of the recesses. |
| 申请公布号 |
US2015087151(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201314038355 |
申请日期 |
2013.09.26 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Tsung-Min;Lee Chung-Ju |
| 分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming an inverse mask over a dielectric layer; forming a mask layer conformally over the inverse mask; removing horizontal portions of the mask layer; after removing the horizontal portions, simultaneously etching the inverse mask and vertical portions of the mask layer, the etching the inverse mask being at a greater rate than the etching the vertical portions of the mask layer, the etching the inverse mask removing the inverse mask, the etching the vertical portions of the mask layer forming a mask comprising rounded surfaces distal from the dielectric layer; and forming recesses in the dielectric layer using the mask, locations of the inverse mask corresponding to fewer than all locations of the recesses. |
| 地址 |
Hsin-Chu TW |
