SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode. The upper electrode includes a conductive oxide film made of a ferroelectric material to which conductivity is provided by adding a conductive material such as Ir, and the conductive oxide film is in contact with the dielectric film.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a capacitor formed above the semiconductor substrate, and having a lower electrode, a ferroelectric film, and an upper electrode; and a conductive oxide film provided between the ferroelectric film and the upper electrode, and having the same structure as a structure of the ferroelectric film, and containing a ferroelectric material provided with conductivity.