| 摘要 |
<p>Provided is an etching solution composition for etching metal oxide including In used as an oxide semiconductor or a transparent electrode of an electronic device such as a semiconductor device or a flat plate display (FPD) and a metal oxid including Zn and In, which realizes long life of the solution by controlling into a practical etching speed, having high solubility of Zn, and having less changes in composition while being used. Provided are an etching solution composition finely processing metal oxide including In used as an oxide semiconductor or a transparent electrode of an electronic device such as a semiconductor device or FPD, and metal oxide including Zn and In, including at least one kind among basic acid having acid dissociation constant of pKan at 25°C be 2.15 or less among dissociative group except from such a halogen hydrogen acid or perhologen acid, and having pH 4 or less at 25°C, and an etching method using the etcing solution composition.</p> |
