| 发明名称 |
RERAM MEMORY CONTROL METHOD AND DEVICE |
| 摘要 |
A method of controlling an array of ReRAM cells including programmable-resistance storage elements, including: during a standby period, applying a non-zero standby voltage between electrodes of the storage elements of each cell of the array. |
| 申请公布号 |
US2015085560(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201414494383 |
申请日期 |
2014.09.23 |
| 申请人 |
STMicroelectronics SA |
发明人 |
Candelier Philippe;Diokh Thérèse Andrée;Damiens Joel;Le Roux Elise |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
programming a programmable-resistance storage element of a ReRam cell of an array of ReRam cells during a programming period; and applying a non-zero standby voltage between electrodes of storage elements of each cell of the array of ReRam cells during a stand-by period. |
| 地址 |
Montrouge FR |
