DEVICE AND METHOD FOR FORMING RESISTIVE RANDOM ACCESS MEMORY CELL

摘要

A device and method for forming resistive random access memory cell are provided. The method includes: providing a first voltage to a first word line connected to a first RRAM cell to form the first RRAM cell; and providing a negative voltage to a second word line connected to a second RRAM cell that shares a first source line and a first bit line with the first RRAM cell. An exemplary device includes: a first RRAM cell, a second RRAM cell, a first voltage source and a charge pump circuit. The first RRAM cell is connected to a first word line. The second RRAM cell is connected to a second word line. The first voltage source provides a first voltage to the first word line to form the first RRAM cell. The charge pump circuit provides a negative voltage to the second word line.

主权项

1. A device, comprising:
a first resistive random access memory (RRAM) cell, connected to a first word line; a second RRAM cell, connected to a second word line; a first voltage source, providing a first voltage to the first word line to form the first RRAM cell; and a charge pump circuit, providing a negative voltage to the second word line.