TUNNELING FIELD EFFECT TRANSISTOR DEVICE AND RELATED MANUFACTURING METHOD

摘要

A transistor device may include a first source portion including a first InSb material set and a first first-type dopant set. The transistor device may include a first drain portion including a second InSb material set and a first second-type dopant set. The transistor device may include a first gate and a corresponding first channel portion disposed between the first source portion and the first drain portion and including a third InSb material set. The transistor device may include a second drain portion including a first GaSb material set and a second first-type dopant set. The transistor device may include a second source portion including a second GaSb material set and a second second-type dopant set. The transistor device may include a second gate and a corresponding second channel portion disposed between the second source portion and the second drain portion and including a third GaSb material set.

主权项

1. A transistor device comprising:
a first source portion including a first InSb material set and a first first-type dopant set; a first drain portion including a second InSb material set and a first second-type dopant set; a first channel portion disposed between the first source portion and the first drain portion and including a third InSb material set; a first gate member overlapping the first channel portion; a second drain portion including a first GaSb material set and a second first-type dopant set; a second source portion including a second GaSb material set and a second second-type dopant set; a second channel portion disposed between the second source portion and the second drain portion and including a third GaSb material set; and a second gate member overlapping the second channel portion.