发明名称 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS
摘要 A substrate treatment method is provided, which includes a rinsing step of supplying a rinse liquid to a front surface of a rotating substrate after a chemical liquid step. The rinsing step includes a higher-speed rinsing step and a deceleration rinsing step to be performed after the higher-speed rinsing step. The deceleration rinsing step includes a liquid puddling step of reducing the rotation speed of the substrate within a rotation speed range lower than a rotation speed employed in the higher-speed rinsing step and supplying the rinse liquid to the front surface of the substrate at a flow rate higher than a maximum supply flow rate employed in the higher-speed rinsing step, whereby a puddle-like rinse liquid film is formed on the front surface of the substrate.
申请公布号 US2015083167(A1) 申请公布日期 2015.03.26
申请号 US201414492692 申请日期 2014.09.22
申请人 DAINIPPON SCREEN MFG. CO., LTD. 发明人 YOSHIZUMI Asuka;HIGUCHI Ayumi
分类号 H01L21/02;H01L21/67 主分类号 H01L21/02
代理机构 代理人
主权项 1. A substrate treatment method comprising: a chemical liquid step of supplying a chemical liquid to a front surface of a rotating substrate to treat the front surface of the substrate with the chemical liquid; and a rinsing step of supplying a rinse liquid to the front surface of the rotating substrate after the chemical liquid step to rinse away the chemical liquid from the front surface of the substrate with the rinse liquid and form a liquid film of the rinse liquid; wherein the rinsing step includes a higher-speed rinsing step and a deceleration rinsing step to be performed after the higher-speed rinsing step; wherein the deceleration rinsing step includes a liquid puddling step of reducing a rotation speed of the substrate within a rotation speed range lower than a rotation speed employed in the higher-speed rinsing step and supplying the rinse liquid to the front surface of the substrate at a supply flow rate higher than a maximum supply flow rate employed in the higher-speed rinsing step, whereby the rinse liquid film is formed in a puddle-like form on the front surface of the substrate.
地址 KYOTO JP