发明名称 MEMORY CELLS, METHODS OF FABRICATION, AND SEMICONDUCTOR DEVICES
摘要 A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.
申请公布号 WO2015041890(A1) 申请公布日期 2015.03.26
申请号 WO2014US54690 申请日期 2014.09.09
申请人 MICRON TECHNOLOGY, INC. 发明人 SIDDIK, MANZAR;LYLE, ANDY;KULA, WITOLD
分类号 G11C11/15;H01L43/08 主分类号 G11C11/15
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