| 摘要 |
<p>[Problem] To provide a spin MOSFET with which a high MC ratio can be achieved. [Solution] This spin MOSFET is a spin MOSFET provided with: a semiconductor layer; a source electrode and a drain electrode which are spaced apart on the semiconductor layer and which respectively have a ferromagnetic layer; a gate insulating film situated on the semiconductor layer serving as a channel between the source electrode and the drain electrode; and a gate electrode situated on the gate insulating film, wherein the junctional resistance on the source electrode side is greater than the junctional resistance on the drain electrode side; when the spin MOSFET is of n-channel type, the source electrode and the drain electrode include a ferromagnetic body in which the magnitude of the gap energy between the Fermi surface and the upper end of the valence band is greater than the magnitude of the gap energy between the lower end of the conduction band and the Fermi surface; and when the spin MOSFET is of p-channel type, the source electrode and the drain electrode include a ferromagnetic body in which the magnitude of the gap energy between the Fermi surface and the upper end of the valence band is less than the magnitude of the gap energy between the lower end of the conduction band and the Fermi surface.</p> |
