Stack type image sensor and fabrication method thereof

摘要

The present invention relates to a stack type image sensor and a method of fabricating the same. The stack type image sensor of the present invention is configured by staking a first substrate on a second substrate. The first substrate includes: a first semiconductor layer where device elements of a pixel circuit are formed; and a first electrode layer including a first electrode electrically connected to the pixel circuit and a first junction insulation film coating the peripheral portion of the first electrode, and includes a first junction surface provided by the first junction insulation film. The second substrate includes a second semiconductor layer where device elements of a logic circuit for driving the pixel circuit are formed; and a second electrode layer including a second electrode electrically connected to the logic circuit and a second junction insulation film coating the peripheral portion of the second electrode, and includes a second junction surface provided by the second junction insulation film, which is in contact with the first junction insulation film.