METHOD FOR MANUFACTURING A LIGHT-EMITTING DIODE

摘要

The present disclosure provides a method for manufacturing a light-emitting diode, including: providing a substrate; forming a first semiconductor layer over the substrate; forming an active layer over the first semiconductor layer; forming a second semiconductor layer over the active layer; removing a portion of the second semiconductor layer and a portion of the active layer to expose a portion of the first semiconductor layer; conform to depositing a transparent conductive layer; forming a patterned mask layer over the transparent conductive layer; performing a wet etch process to remove a portion of the transparent conductive layer; performing a dry etch process to completely remove the portion of the transparent conductive layer not covered by the patterned mask layer; removing the patterned mask layer; and forming a first electrode and a second electrode.

主权项

1. A method for manufacturing a light-emitting diode, comprising:
providing a substrate; forming a first semiconductor layer over the substrate, wherein the first semiconductor layer has a first conductivity type; forming an active layer over the first semiconductor layer; forming a second semiconductor layer over the active layer, wherein the second semiconductor layer has a second conductivity type different from the first conductivity type; removing a portion of the second semiconductor layer and a portion of the active layer to expose a portion of the first semiconductor layer; conform to depositing a transparent conductive layer over a top surface and sidewalls of the second semiconductor layer and over the exposed portion of the first semiconductor layer; forming a patterned mask layer over the transparent conductive layer to cover a portion of the transparent conductive layer disposed over the second semiconductor layer; performing a wet etch process to remove a portion of the transparent conductive layer not covered by the patterned mask layer; after the wet etch process, performing a dry etch process to completely remove the portion of the transparent conductive layer not covered by the patterned mask layer; removing the patterned mask layer; forming a first electrode over the transparent conductive layer; and forming a second electrode over the portion of the first semiconductor layer not covered by the active layer.