NON-VOLATILE MEMORY DEVICE

摘要

　Provided is a non-volatile memory device provided with: a first conductive layer (12a); a second conductive layer (14a); a ferroelectric film (16a)　provided between the first conductive layer and the second conductive layer; and a paraelectric film (18a) provided between the first conductive layer or the second conductive layer and the ferroelectric film, the paraelectric film being adapted to have a higher relative permittivity than that of the ferroelectric film and a film thickness of 1.5-10 nm.