| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for a semiconductor device manufacturing process as a gate last process which can reduce parasitic capacitance generated between gate wiring and a substrate.SOLUTION: A semiconductor device comprises: a fin-like semiconductor layer 103 formed on a semiconductor substrate 101; a first insulation film 104 formed around the fin-like semiconductor layer; a columnar semiconductor layer 106 formed on the fin-like semiconductor layer; a diffusion layer 112 formed on an upper part of the fin-like semiconductor layer and a lower part of the columnar semiconductor layer; a diffusion layer 110 formed on an upper part of the columnar semiconductor layer; a gate insulation film 113 formed around the columnar semiconductor layer; a metal gate electrode 121a formed around the gate insulation film; metal gate wiring which is connected to the metal gate electrode and extends in a direction orthogonal to the fin-like semiconductor layer; and a metal gate pad 121c connected to the metal gate wiring. A width of the columnar semiconductor layer is the same with a width of the fin-like semiconductor layer. Each of a width of the metal gate electrode and a width of the metal gate pad is formed wider than a width of the metal gate wiring. |
