| 发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
| 摘要 |
A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator. |
| 申请公布号 |
US2015087162(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201314394112 |
申请日期 |
2013.05.17 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Matsumoto Naoki |
| 分类号 |
H01L21/67;H01L21/3065;H01L21/263 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma processing apparatus comprising:
a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots and provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator; and a heating member provided within the slot plate. |
| 地址 |
Tokyo JP |
