发明名称 METHODS OF FORMING THIN-FILM PHOTOVOLTAIC DEVICES WITH DISCONTINUOUS PASSIVATION LAYERS
摘要 In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.
申请公布号 US2015087106(A1) 申请公布日期 2015.03.26
申请号 US201414492693 申请日期 2014.09.22
申请人 Beck Markus Eberhard;Nagle Timothy J.;Basu Sourav Roger 发明人 Beck Markus Eberhard;Nagle Timothy J.;Basu Sourav Roger
分类号 H01L31/18;H01L31/0232;H01L31/02 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method for forming a photovoltaic device, the method comprising: forming a thin-film absorber layer over and in electrical contact with a back contact layer, the back contact layer comprising a conductive material and the thin-film absorber layer having a doping polarity; forming a partner layer over and in electrical contact with the thin-film absorber layer, the partner layer having a doping polarity opposite that of the thin-film absorber layer, the partner layer and thin-film absorber layer thereby forming a p-n junction; forming a front contact layer disposed over and in electrical contact with the partner layer; and forming at least one of: a first discontinuous passivation layer disposed between the thin-film absorber layer and the partner layer, the partner layer making electrical contact with the thin-film absorber layer only through discontinuities in the first discontinuous passivation layer;a second discontinuous passivation layer disposed between the partner layer and the front contact layer, the front contact layer making electrical contact with the partner layer only through discontinuities in the second discontinuous passivation layer; ora third discontinuous passivation layer disposed between the back contact layer and the thin-film absorber layer, the thin-film absorber layer making electrical contact with the back contact layer only through discontinuities in the third discontinuous passivation layer.
地址 Scotts Valley CA US