发明名称 TEMPERATURE SENSOR
摘要 Provided is a temperature sensor which does not easily cause a crack in a Ti—Al—N-based thermistor material layer when the film is bent, can be directly deposited on a film or the like without firing, and has a high reliability with a high heat resistance. The temperature sensor includes an insulating film 2, a thin film thermistor portion 3 made of a Ti—Al—N-based thermistor material formed on the insulating film, a pair of pattern electrodes 4 formed on the insulating film with a pair of opposed electrode portions 4a being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the pair of opposed electrode portions covers the entire surface of thin film thermistor portion excluding the region between the opposed electrode portions.
申请公布号 US2015085898(A1) 申请公布日期 2015.03.26
申请号 US201314389089 申请日期 2013.03.26
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 Tanaka Hiroshi;Inaba Hitoshi;Takeshima Kazuta;Nagatomo Noriaki
分类号 G01K7/22 主分类号 G01K7/22
代理机构 代理人
主权项 1. A temperature sensor comprising: an insulating film; a thin film thermistor portion made of a Ti—Al—N-based thermistor material on the insulating film; and a pair of pattern electrodes formed on the insulating film with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the pair of the opposed electrode portions covers the entire surface of the thin film thermistor portion excluding the region between the opposed electrode portions.
地址 Tokyo JP