| 发明名称 |
CONNECTION MEMBER, SEMICONDUCTOR DEVICE, AND STACKED STRUCTURE |
| 摘要 |
A connection member according to an embodiment includes a dielectric material, a penetrating via penetrating through the dielectric material, a first metal plane provided in the dielectric material, the first metal plane being perpendicular to an extension direction of the penetrating via, the first metal plane crossing the penetrating via, and a second metal plane provided n or on the dielectric material in parallel with the extension direction of the penetrating via, the second metal plane connected to the first metal plane. |
| 申请公布号 |
US2015084208(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201414466493 |
申请日期 |
2014.08.22 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
IIDA Atsuko;Sasaki Tadahiro;Managaki Nobuto;Onozuka Yutaka;Yamada Hiroshi |
| 分类号 |
H01L23/522;H01L23/00 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A connection member comprising:
a dielectric material; a penetrating via penetrating through the dielectric material; a first metal plane provided in the dielectric material, the first metal plane being perpendicular to an extension direction of the penetrating via, the first metal plane crossing the penetrating via; and a second metal plane provided in or on the dielectric material, the second metal plane provided in parallel with the extension direction of the penetrating via, the second metal plane connected to the first metal plane. |
| 地址 |
Minato-ku JP |
