LIGHT EMITTING DEVICE GROWN ON A SILICON SUBSTRATE

摘要

A method according embodiments of the invention includes growing a semiconductor structure on a substrate including silicon. The semiconductor substrate includes an aluminum-containing layer in direct contact with the substrate, and a III-nitride light emitting layer disposed between an n-type region and a p-type region. The method further includes removing the substrate. After removing the substrate, a transparent material is formed in direct contact with the aluminum-containing layer. The transparent material is textured.

主权项

1. A device comprising:
a semiconductor structure comprising:
a III-nitride light emitting layer disposed between an n-type region and a p-type region; andaluminum containing layers, an AlGaN layer disposed upon the n-type region and an AlN layer disposed upon the AlGaN layer; and a transparent material disposed on the AlN.