SEMICONDUCTOR DEVICE

摘要

A semiconductor device including a transistor and a capacitor which occupies a small area is provided. The semiconductor device includes a semiconductor, first and second conductive films each comprising a region in contact with top and side surfaces of the semiconductor, a first insulating film comprising a region in contact with the top and side surfaces of the semiconductor, a third conductive film comprising a region facing the top and side surfaces of the semiconductor with the first insulating film therebetween, a second insulating film which is in contact with the first conductive film and comprises an opening, a fourth conductive film comprising a region in contact with the opening, a third insulating film comprising a region facing the opening with the fourth conductive film therebetween, and a fifth conductive film comprising a region facing the fourth conductive film with the third insulating film therebetween.

主权项

1. A semiconductor device comprising:
a semiconductor; a first conductive film and a second conductive film each comprising a region in contact with a top surface and a side surface of the semiconductor; a first insulating film comprising a region in contact with the top surface and the side surface of the semiconductor; a third conductive film comprising a region facing the top surface and the side surface of the semiconductor with the first insulating film therebetween; a second insulating film which is in contact with the first conductive film and comprises an opening reaching the first conductive film; a fourth conductive film comprising a region in contact with a bottom surface and a side surface of the opening; a third insulating film comprising a region facing the bottom surface and the side surface of the opening with the fourth conductive film therebetween; and a fifth conductive film comprising a region facing the fourth conductive film with the third insulating film therebetween.