PLASMA PROCESSOR AND PLASMA PROCESSING METHOD

摘要

An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

主权项

1. A plasma processing apparatus comprising:
a processing chamber configured to accommodate a substrate to be processed and performing a plasma processing thereon; a susceptor installed inside the processing chamber to mount the substrate thereon, the susceptor serving as an electrode; a first path formed inside the susceptor to circulate a coolant therethrough, the first path including a coolant inlet line, a coolant exhaust line extending vertically to exhaust the coolant, and a coolant circulating line connected to the coolant inlet line and the coolant exhaust line, the coolant inlet line introducing the coolant into the coolant circulating line; and a second path, formed inside the susceptor, including a gas inlet portion configured to supply a cooling gas from a bottom of the susceptor, a gas storage being connected to the gas inlet portion and being configured to store the cooling gas, fine grooves formed on a mounting surface of the susceptor, and gas supply fine holes to supply the cooling gas from the gas storage to the fine grooves, wherein a temperature of the susceptor is controlled by circulating the coolant through the coolant circulating line and a temperature of the substrate to be processed is controlled by supplying the cooling gas from the gas storage to a backside of the substrate mounted on the susceptor through the gas supply fine holes, and the gas storage is formed under the coolant circulating line, and wherein dimensions of the gas storage are different from those of the gas inlet portion and the gas supply fine holes.