发明名称 |
MAGNETIC-ASSISTED NONDESTRUCTIVE SELF-REFERENCE SENSING METHOD FOR SPIN-TRANSFER TORQUE RANDOM ACCESS MEMORY |
摘要 |
A method of reading a memory cell of a magneto-resistive random access memory device, wherein the memory cell has a ferromagnetic free layer having a first magnetization orientation and a ferromagnetic reference layer, includes applying a first read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a first voltage generated by the memory cell in response to the first read current, generating a magnetic field adjacent to the memory cell, the magnetic field having a second magnetization orientation that is not parallel to the first magnetization orientation, while the magnetic field is being generated, applying a second read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a second voltage generated by the memory cell in response to the second read current, and determining a state of the memory cell based on the first voltage and the second voltage. |
申请公布号 |
WO2015042033(A1) |
申请公布日期 |
2015.03.26 |
申请号 |
WO2014US55828 |
申请日期 |
2014.09.16 |
申请人 |
UNIVERSITY OF PITTSBURGH-OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION |
发明人 |
CHEN, YIRAN;EKEN, ENES;LI, HAI;WEN, WUJIE;BI, XIUYUAN |
分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
代理机构 |
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地址 |
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