发明名称 |
NON-VOLATILE MEMORY (NVM) WITH DYNAMICALLY ADJUSTED REFERENCE CURRENT |
摘要 |
A sense amplifier is configured to sense a current from a selected bit cell of a non-volatile memory array and compare the sensed current to a reference current to determine a logic state stored in the bit cell. A controller is configured to perform a program/erase operation on at least a portion of the memory array to change a logic state of at least one bit cell of the portion of the memory array; determine a number of program/erase pulses applied to the at least one bit cell during the program/erase operation to achieve the change in logic state; and when the number of program/erase pulses exceeds a pulse count threshold, adjust the reference current of the sense amplifier for a subsequent program/erase operation. |
申请公布号 |
US2015085593(A1) |
申请公布日期 |
2015.03.26 |
申请号 |
US201314033622 |
申请日期 |
2013.09.23 |
申请人 |
MU FUCHEN;He Chen;Wang Yanzhuo |
发明人 |
MU FUCHEN;He Chen;Wang Yanzhuo |
分类号 |
G11C7/08 |
主分类号 |
G11C7/08 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Austin TX US |