PROGRAMMING METHOD OF NONVOLATILE MEMORY DEVICE

摘要

Provided is a programming method of a nonvolatile memory device which includes a plurality of strings each including a source select transistor, a plurality of memory cells, and a drain select transistor which are connected in series between a common source line and a bit line, The programming method includes: applying a first voltage to the common source line during a first period in which a channel of a plurality of memory cells of an unselected string is floated; and applying a second voltage increased more than the first in voltage to the common source line during a second period in which a selected memory cell is programmed, when a selected word line belongs to a word line group adjacent to the common source line.

主权项

1. A programming method for a nonvolatile memory device that includes a plurality of strings, each including a source select transistor, a plurality of memory cells, and a drain select transistor that are connected in series between a common source line and a bit line, the programming method comprising:
applying a first voltage to the common source line during a first period in which a channel of a plurality of memory cells of an unselected string is floated; and applying, when a selected word line belongs to a word line group adjacent to the common source line, a second voltage that is greater than the first voltage to the common source line during a second period in which a selected memory cell, of the plurality of memory cells, is programmed.