发明名称 METHOD AND SYSTEM FOR PROGRAMMING NON-VOLATILE MEMORY CELLS BASED ON PROGRAMMING OF PROXIMATE MEMORY CELLS
摘要 A multi-level non-volatile memory device programs cells in each row in a manner that takes into account the coupling from the programming of cells that are proximate the row to be programmed. In one example of the invention, after the row has been programmed, the proximate cells are verified by read, comparison, and, if necessary, reprogramming operations to compensate for charge added to proximate memory cells resulting from programming the row. In another example of the invention, a row of memory cells is programmed with charge levels that take into account the charge that will be added to the memory cells when proximate memory cells are subsequently programmed.
申请公布号 US2015085578(A1) 申请公布日期 2015.03.26
申请号 US201414561569 申请日期 2014.12.05
申请人 Micron Technology, Inc. 发明人 Khaef Amin
分类号 G11C16/10 主分类号 G11C16/10
代理机构 代理人
主权项 1. A method, comprising: determining first cells of a subset of cells to be programmed to a first threshold level; programming the first cells of the subset of cells to the first threshold level; determining second cells of the subset of cells to be programmed to a second threshold level, the second cells different from the first cells of the subset of cells and wherein the first threshold level is for a state and the second threshold level is a different threshold level for the same state; and programming the second cells of the subset of cells to the second threshold voltage.
地址 Boise ID US