发明名称 |
UPDATING READ VOLTAGES |
摘要 |
A data storage device includes a controller that is configured to determine a first read voltage for a first page of a non-volatile memory (e.g., a lower page of a Multi-Level Cell flash memory device). The controller is also configured to determine a second read voltage for a second page (e.g., an upper page) of the non-volatile memory by applying an offset value to the first read voltage. The controller is also configured to store data identifying the first read voltage and the second read voltage. |
申请公布号 |
US2015085571(A1) |
申请公布日期 |
2015.03.26 |
申请号 |
US201314035749 |
申请日期 |
2013.09.24 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
HU Xinde;YANG Nian Niles;CHANDRASEKHAR Uday;HUANG Jianmin |
分类号 |
G11C16/26 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
1. A method of updating a set of read voltages, the method comprising:
in a data storage device including a controller, performing:
determining a first read voltage for a first page of a non-volatile memory;determining a second read voltage for a second page of the non-volatile memory by applying an offset value to the first read voltage; andstoring data identifying the first read voltage and the second read voltage. |
地址 |
Plano TX US |