发明名称 ELECTRIC POWER CONVERSION DEVICE
摘要 An electric power conversion device of an embodiment includes the electric power conversion device expressed as an equivalent circuit including, a power supply, a first parasitic inductance, a first diode; a second parasitic inductance connected to the first diode in series, a second diode connected to the first diode in parallel, a third parasitic inductance connected to the second diode in series, a switching element, a gate circuit, and a load. The equivalent circuit includes a first circuit loop and a second circuit loop. The first circuit loop includes the power supply, the first parasitic inductance, the first diode, the second parasitic inductance, the switching element, and the gate circuit. The second circuit loop includes the power supply, the first parasitic inductance, the second diode, the third parasitic inductance, the switching element, and the gate circuit.
申请公布号 US2015085548(A1) 申请公布日期 2015.03.26
申请号 US201414478445 申请日期 2014.09.05
申请人 Kabushiki Kaisha Toshiba 发明人 TAKAO Kazuto;Shinohe Takashi
分类号 H02M7/537 主分类号 H02M7/537
代理机构 代理人
主权项 1. An electric power conversion device expressed as an equivalent circuit comprising: a power supply; a first parasitic inductance; a first diode; a second parasitic inductance connected to the first diode in series; a second diode connected to the first diode in parallel; a third parasitic inductance connected to the second diode in series; a switching element; a gate circuit; and a load, wherein the equivalent circuit includes a first circuit loop and a second circuit loop, the first circuit loop includes the power supply, the first parasitic inductance, the first diode, the second parasitic inductance, the switching element, and the gate circuit, the second circuit loop includes the power supply, the first parasitic inductance, the second diode, the third parasitic inductance, the switching element, and the gate circuit, where an LC resonance frequency based on the first parasitic inductance and the second parasitic inductance of the first circuit loop and a junction capacitance of the first diode is denoted as f1, and an LC resonance frequency based on the first parasitic inductance and the third parasitic inductance of the second circuit loop and a junction capacitance of the second diode is denoted as f2, the LC resonance frequency f1 and the LC resonance frequency f2 are different frequencies.
地址 Minato-ku JP