| 摘要 |
<p>This semiconductor device has: first columnar semiconductor layers (129, 131, 132, 134); a gate insulating film (162) that is formed around the first columnar semiconductor layers; gate electrodes (168a, 170a) that are formed around the gate insulating film; gate wiring lines (168b, 170b) that are connected to the gate electrodes; first diffusion layers (302, 304, 305, 307) that are formed as upper portions of the first columnar semiconductor layers; second diffusion layers (143a, 143b) that are formed as lower portions of the first columnar semiconductor layers; and storage elements (181a, 181b, 182a, 182b), which are formed on the first diffusion layers, and in which resistance values vary.</p> |
