Pothoelectrode and method of forming the same, and photoelectrochemical cell using the Pothoelectrode

摘要

The present invention relates to a photoelectrode and a photoelectrochemical cell using the same. More particularly, the present invention provides a photoelectrode comprising a semiconductor layer including a GaN-based alloy and a graphene layer, a manufacturing method thereof, and a photoelectrochemical cell using the same. The photoelectrode can react with a larger amount of sunlight owing to a wide range of wavelength, has photocorrosion inhibited in an electrolyte, and can have energy conversion efficiency increased on an interface.