SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce hydrogen concentration and oxygen vacancies in an oxide semiconductor film, and to improve reliability of a semiconductor device which includes a transistor using the oxide semiconductor film.SOLUTION: A semiconductor device includes: a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at the g value of 1.93 by the electron spin resonance.