| 发明名称 |
WAVEGUIDE-COUPLED MSM-TYPE PHOTODIODE |
| 摘要 |
A waveguide-coupled MSM-type photodiode of the present invention comprises a structure in which a semiconductor light-absorbing layer and an optical waveguide core layer are adjacent and optically coupled to each other, has formed metal-semiconductor-metal (MSM) junctions which are arranged at an interval on the semiconductor light-absorbing layer, and is characterized in that of the MSM electrodes arranged at the interval, a voltage is set so that a reverse bias is applied to those MSM electrodes that are arranged on a light incidence side. |
| 申请公布号 |
US2015084143(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201314388028 |
申请日期 |
2013.03.18 |
| 申请人 |
NEC Corporation |
发明人 |
Fujikata Junichi;Nakamura Takahiro |
| 分类号 |
H01L31/108;H01L31/0232;H01L27/146;H01L31/0368;H01L31/0376 |
主分类号 |
H01L31/108 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A waveguide-coupled metallic-semiconductor-metallic (MSM)-type photodiode comprising:
a semiconductor light absorbing layer arranged to be adjacent to an optical waveguide core layer, the optical waveguide core layer being optically coupled with the semiconductor light absorbing layer; and MSM junctions configured to be formed on the semiconductor light absorbing layer, the MSM junctions being arranged at intervals; wherein a voltage is set such that a reverse bias is applied to an MSM electrode of a MSM junction arranged at a light incidence side among MSM electrodes of the MSM junctions arranged at intervals. |
| 地址 |
Tokyo JP |
