发明名称 |
SEMICONDUCTOR DEVICE INCLUDING A POWER TRANSISTOR DEVICE AND BYPASS DIODE |
摘要 |
A semiconductor device includes a vertical FET device and a Schottky bypass diode. The vertical FET device includes a gate contact, a source contact, and a drain contact. The gate contact and the source contact are separated from the drain contact by at least a drift layer. The Schottky bypass diode is coupled between the source contact and the drain contact and monolithically integrated adjacent to the vertical FET device such that a voltage placed between the source contact and the drain contact is distributed throughout the drift layer by the Schottky bypass diode in such a way that a voltage across each one of a plurality of P-N junctions formed between the source contact and the drain contact within the vertical FET device is prevented from exceeding a barrier voltage of the respective P-N junction. |
申请公布号 |
US2015084118(A1) |
申请公布日期 |
2015.03.26 |
申请号 |
US201314032919 |
申请日期 |
2013.09.20 |
申请人 |
Cree, Inc. |
发明人 |
Van Brunt Edward Robert;Pala Vipindas;Cheng Lin |
分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device comprising:
a vertical FET device including a gate contact, a source contact, and a drain contact, wherein the gate contact and the source contact are separated from the drain contact by at least a drift layer; and a bypass diode coupled between the source contact and the drain contact and monolithically integrated adjacent to the vertical FET device such that a voltage placed between the source contact and the drain contact is distributed through the drift layer by the bypass diode in such a way that a voltage across each one of a plurality of P-N junctions formed between the source contact and the drain contact in the vertical FET device is prevented from exceeding a barrier voltage of the respective P-N junction. |
地址 |
Durham NC US |