| 摘要 |
The invention relates to a system for the radiation treatment of substrates, which comprises at least one radiation source in a chamber above the substrate holders for loading substrates to be treated, and wherein the chamber comprises means for maintaining a gas flow in the chamber, said means having at least one gas inlet and at least one gas outlet, characterized in that the at least one gas inlet is arranged in the region of the substrate holders, such that gas flowing in through the at least one gas inlet firstly flows around the substrate holders before leaving the chamber again through the gas outlet either directly and/or after flowing round the at least one radiation source. |
