| 摘要 |
<p>A semiconductor structure, comprising a first semiconductor material layer (106) and a second semiconductor material layer (108) which have different stresses. By using the stack collocation of the first semiconductor material layer (106) and the second semiconductor material layer (108), in the case where the first semiconductor material layer (106) and the second semiconductor material layer (108) are respectively compressed and stretched, or stretched and compressed, the channel stress in a semiconductor element is adjusted, thereby forming a stressed channel.</p> |
