Extreme Ultraviolet Lithography Process And Mask

摘要

A system of an extreme ultraviolet lithography (EUVL) is disclosed. an extreme ultraviolet lithography (EUVL) system includes an extreme ultraviolet (EUV) reflection-type mask having a patterned flare-suppressing-by-phase-shifting (FSbPhS) layer disposed over a patterned absorption layer. The system also includes a radiation to expose the EUV mask and a projection optics box (POB) to collect and direct the radiation that reflects from the EUV mask to expose a target.

主权项

1. An extreme ultraviolet lithography (EUVL) system comprising:
an extreme ultraviolet (EUV) reflection-type mask, including:
a substrate;a multilayer mirror disposed over the substrate;a capping layer disposed over the multilayer mirror;a patterned absorption layer disposed over the capping layer, wherein the patterned absorption layer defines a pattern density;a patterned flare-suppressing-by-phase-shifting (FSbPhS) layer disposed over the patterned absorption layer, wherein a material and thickness of the patterned absorber layer and the patterned FSbPhS layer are such that a substantial portion of a first radiation wave of a pre-determined wavelength that reflects from the patterned FSbPhS layer in an out-of-phase relationship with a second radiation wave of the pre-determined wave length that reflects from the multilayer mirror; a radiation source to generate a radiation to expose the EUV mask; and a projection optics box (POB) to collect and direct the radiation that reflects from the EUV mask to expose a target.