TFT-LCD Array Substrate Manufacturing Method and LCD Panel/Device Produced by the Same

摘要

The present invention teaches a TFT-LCD array substrate manufacturing method: a) forming a gate electrode, a gate electrode insulator layer, an active layer, a source electrode and a drain electrode, a passivation layer, and a passivation layer via on top of the drain electrode on a glass substrate; b) depositing an ITO film on the glass substrate processed by the step a), removing through exposure and development the photo resist in a TFT area outside the passivation layer via and a part of the photo resist in a pixel area where gaps are to be formed, and revealing the ITO film outside the passivation layer via in the TFT area; c) removing a remaining photo resist in the pixel area where gaps are to be formed using a fourth dry etch, so that the ITO film on the gaps to be formed is revealed; d) removing the revealed ITO film using a third wet etch; and e) peeling the photo resist not yet removed, and forming an ITO electrode that is connected to the passivation layer via. The present invention also teaches a LCD panel and a LCD device having a TFT-LCD array substrate manufactured by foregoing method.

主权项

1. A TFT-LCD array substrate manufacturing method comprising the steps of:
a) forming a gate electrode, a gate electrode insulator layer, an active layer comprising an amorphous silicon layer and an ohmic contact layer, a source electrode and a drain electrode on top of the active layer, a passivation layer, and a passivation layer via on top of the drain electrode sequentially on a glass substrate; b) depositing an ITO film on the glass substrate processed by the step a), coating a photo resist on the ITO film, and, through exposure and development, removing the photo resist in a TFT area outside the passivation layer via and a part of the photo resist in a pixel area where gaps are to be formed so as to reveal the ITO film outside the passivation layer via; c) removing a remaining photo resist in the pixel area where gaps are to be formed from the step b) using a fourth dry etch, so that the ITO film on the gaps to be formed is revealed; d) removing the ITO film revealed by the steps b) and c) using a third wet etch; and e) peeling the photo resist not yet removed, and forming an ITO electrode that is connected to the passivation layer via.