METHOD FOR PRODUCING IMAGE PICKUP APPARATUS AND METHOD FOR PRODUCING SEMICONDUCTOR APPARATUS

摘要

A method for producing an image pickup apparatus includes: a process of cutting an image pickup chip substrate where electrode pads are formed around each of the light receiving sections to fabricate image pickup chips; a process of bonding image pickup chips determined as non-defective products to a glass wafer to fabricate a joined wafer; a process of filling a sealing member among the image pickup chips on the joined wafer; a machining process including a thinning a thickness of the joined wafer to flatten a machining surface and a forming through-hole interconnections, each of which is connected to each of the electrode pads; a process of forming a plurality of external connection electrodes, each of which is connected to each of the electrode pads via each of the through-hole interconnections; and a process of cutting the joined wafer.

主权项

1. A method for producing an image pickup apparatus, the method comprising:
a process of cutting an image pickup chip substrate where a plurality of light receiving sections are formed on a first main face and electrode pads are formed around each of the light receiving sections to fabricate a plurality of image pickup chips; a process of bonding the first main face of each of the image pickup chips determined as non-defective products to a transparent support substrate different from the image pickup chip substrate in at least either size or shape via a transparent adhesive layer to fabricate a joined wafer; a process of filling a sealing member among the plurality of image pickup chips bonded to the joined wafer; a machining process comprising a process of machining the joined wafer to thin a thickness of the joined wafer, from a second main face side to flatten a machining surface and a process of forming through-hole interconnections, each of which is connected to each of the electrode pads; a process of forming a plurality of external connection electrodes, each of which is connected to each of the electrode pads via each of the through-hole interconnections, on the second main face; and a process of cutting and individualizing the joined wafer.