INTEGRATED CIRCUIT HAVING VARYING SUBSTRATE DEPTH AND METHOD OF FORMING SAME

摘要

A semiconductor device is formed such that a semiconductor substrate of the device has a non-uniform thickness. A cavity is etched at a selected side of the semiconductor substrate, and the selected side is then fusion bonded to another substrate, such as a carrier substrate. After fusion bonding, the side of the semiconductor substrate opposite the selected side is ground to a defined thickness. Accordingly, the semiconductor substrate has a uniform thickness except in the area of the cavity, where the substrate is thinner. Devices that benefit from a thinner substrate, such as an accelerometer, can be formed over the cavity.

主权项

1. A semiconductor device, comprising:
a first substrate having a first side and a second side, the first substrate having a cavity formed at the first side, such that the first substrate has a first thickness between the second side and a bottom of the cavity and a second thickness between the first side and the second side; and a second substrate bonded to the first side of the first substrate.