发明名称 |
GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES |
摘要 |
Methods of facilitating gate height uniformity by controlling recessing of dielectric material and semiconductor devices formed from the methods are provided. The methods include, for instance, forming a transistor of the semiconductor device with an n-type transistor and a p-type transistor, the n-type transistor and the p-type transistor including plurality of sacrificial gate structures and protective masks at upper surfaces of the plurality of sacrificial gate structures; providing a dielectric material over and between the plurality of sacrificial gate structures; partially densifying the dielectric material to form a partially densified dielectric material; further densifying the partially densified dielectric material to create a modified dielectric material; and creating substantially planar surface on the modified dielectric material, to control dielectric material recess and gate height. |
申请公布号 |
US2015084131(A1) |
申请公布日期 |
2015.03.26 |
申请号 |
US201314032740 |
申请日期 |
2013.09.20 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
CHEN Tsung-Liang;LIU Hung-Wei;PAL Rohit;TAI Hsin-Neng;WANG Huey-Ming;LEE Tae Hoon;SRIVATHANAKUL Songkram;CHEN Danni |
分类号 |
H01L21/8238;H01L27/092 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
forming a transistor of the semiconductor device with a p-type transistor and a n-type transistor, the p-type transistor and the n-type transistor comprising plurality of sacrificial gate structures and protective masks at upper surface thereof; providing a dielectric material over and between the plurality of sacrificial gate structures; partially densifying the dielectric material to form a partially densified dielectric material; further densifying the partially densified dielectric material to create a modified dielectric material; and creating substantially planar surface on the modified dielectric material, to control dielectric material recess and gate height. |
地址 |
Grand Cayman KY |