发明名称 BIOSENSING WELL ARRAY WITH PROTECTIVE LAYER
摘要 The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.
申请公布号 US2015084099(A1) 申请公布日期 2015.03.26
申请号 US201314033089 申请日期 2013.09.20
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Shen Wei-Cheng;Chang Yi-Hsien;Lin Shih-Wei;Cheng Chun-Ren
分类号 G01N27/414 主分类号 G01N27/414
代理机构 代理人
主权项
地址 Hsin-Chu TW