THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND ARRAY SUBSTRATE

摘要

A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes: a gate electrode (102) formed on a substrate (101), a gate insulating layer (103) formed on the gate electrode (102) and covering at least a part of the substrate (101), and a semiconductor layer (105′), a source electrode (107a) and a drain electrode (107b) which are formed on the gate insulating layer (103). The material of the semiconductor layer (105′) is an oxide semiconductor; and the material of the source electrode (107a) and drain electrode (107b) is the oxide semiconductor which is doped. The source electrode (107a), the drain electrode (107b) and the semiconductor layer (105′) are disposed in the same layer.

主权项

1. A thin film transistor comprising:
a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode and covering at least a part of the substrate, and a semiconductor layer, a source electrode and a drain electrode which are formed on the gate insulating layer; wherein the material of the semiconductor layer is an oxide semiconductor, the material of the source and drain electrodes is the oxide semiconductor which is doped, and the source electrode, the drain electrode and the semiconductor layer are disposed in the same layer.