SUPER-JUNCTION SEMICONDUCTOR DEVICE

摘要

The present invention relates to a super-junction semiconductor device. For the super-junction semiconductor device: a transition region is inserted between a cell region and a junction termination region; and the magnitude of a breakdown voltage generated by the critical electric field of a unit cell in the junction termination region is set to be bigger than the magnitude of a breakdown voltage generated by the critical electric field of a unit cell in the cell region. Therefore, a breakdown voltage to be formed in an ideal semiconductor device can be generated in the cell region. Accordingly, the present invention enables the critical electric field of each unit cell to be different from each other and decreases the electric field of other cells outside the cell region, thereby increasing the margin of each cell with respect to a critical electric field and thus obtaining a stable breakdown voltage.