Photoelectric conversion layer and applications thereof to solar cell, photodiode and image sensor

摘要

The present disclosure provides a photoelectric conversion layer containing a semiconductor and plural metal-containing minute structures dispersed therein. The minute structures are minute structures (A) comprising metal material (±) or otherwise minute structures (B) comprising metal material (±) and material (²) selected from the group consisting of oxide, nitride and oxynitride of substances and the semiconductor. In the minute structures (B), the material (²) is on the surface of the metal material (±). Each of the minute structures has an equivalent circle diameter of 1 nm to 10 nm inclusive on the basis of the projected area when observed from a particular direction. The closest distance between adjacent two of the minute structures is 3 nm to 50 nm inclusive. The present disclosure also provides applications of the photoelectric conversion layer to a solar cell, a photodiode and an image sensor.