Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

摘要

A method of forming a high-quality SiC single crystal wafer is described comprising the steps of:
growing on a SiC single crystal seed a SiC single crystal boule having a diameter sufficient for slicing wafers between 100 and 200 mm in diameter, wherein said sublimation growth occurs in the presence of controlled axial and radial temperature gradients and controlled flux of sublimated source material;
and slicing from said SiC boule a SiC wafer having: a diameter between 100 and 200 mm; a lattice curvature of no more than about 0.2°, 0.1°, or 0.06° over the total area of the wafer; and a full width at half maximum (FWHM) of the x-ray reflection of no more than about 50, 30, or 20 arc-seconds over the total area of the wafer.