| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target composed of a In-Ga-Zn-based oxide sintered compact with which a uniform thin-film transistor panel with large area can be manufactured. <P>SOLUTION: The oxide sintered compact contains In (indium), Zn (zinc), Ga (gallium), and Sn (tin), and the atomic ratio of Sn (tin) satisfies 0.01<Sn/(In+Ga+Zn+Sn)<0.10. <P>COPYRIGHT: (C)2011,JPO&INPIT |
